Physical review. B, Condensed matter · 1988 · 140 citations · 29 references
Natural SciencesMaterials ScienceCondensed Matter PhysicsElectronic MaterialsSemiconductor MaterialsAb Initio MethodsElectronic Band StructureElectronic StructureElectronic Structure Of SolidsSemiconductor PhysicsWide Band Gap SemiconductorsBand Structure CalculationBand TheoryElectronic Band TheoryInteraction ParametersSubband StructureSuperlatticesTight-binding ModelsTight-binding Theory
A simple theoretical method for calculating superlattice electronic structures based on the bond-orbital model is presented. The method combines the virtues of the envelope-function (k\ensuremath{\cdot}p) and tight-binding methods. The method contains no fitting parameters; all interaction parameters involved are directly related to parameters for describing bulk bands near the zone center in the k\ensuremath{\cdot}p perturbation theory. Subband structures of a GaAs-${\mathrm{Al}}_{\mathrm{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$As and an InAs-GaSb superlattice are calculated for illustration.
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