Deposition of Thin Films of Gallium Sulfide from a Novel Liquid Single-Source Precursor, Ga(SOCNEt2)3, by Aerosol-Assisted CVD

Abstract

Group III chalcogenides are interesting materials for photovoltaic and optoelectronic devices. Here the synthesis and use of a novel, single-source precursor for the deposition of face-centered cubic GaS by aerosol-assisted CVD is described. The films show a high degree of orientation and an unusual spherical morphology arranged in a reasonably uniform array on the substrate (see Figure).