Electronics Letters · 1991 · 42 citations · 5 references
EngineeringElectrical EngineeringPhysicsOptoelectronicsPhotonicsSemiconductor MaterialsHigh-frequency Semiconductor DevicesOptical ModulationOptical ModulatorsOptical Properties Of SemiconductorsQuantum OptoelectronicsQuantum WellsInsertion LossInsertion Loss ReductionOperating VoltageQuantum Confined Stark EffectQuantum Well HeterostructuresQuantum Well StructuresReflectivitySemiconductor Optical Modulators
A normally-on high-performance asymmetric Fabry–Perot modulator using the quantum confined Stark effect in GaAs quantum wells confined by short period AlAs–GaAs superlattices is reported. The modulator is the first of this type to exhibit simultaneously low insertion loss (<1.65 dB), large reflectivity change (>68%) and practically infinite contrast at the Fabry–Perot resonance for an operating voltage swing of under 4 V.
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