Simultaneous achievement of low insertion loss, high contrast and low operating voltage in asymmetric Fabry-Perot reflection modulator

Abstract

A normally-on high-performance asymmetric Fabry–Perot modulator using the quantum confined Stark effect in GaAs quantum wells confined by short period AlAs–GaAs superlattices is reported. The modulator is the first of this type to exhibit simultaneously low insertion loss (<1.65 dB), large reflectivity change (>68%) and practically infinite contrast at the Fabry–Perot resonance for an operating voltage swing of under 4 V.