Electronics Letters · 1989 · 152 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesNanoelectronicsOptical ModulatorsPhotonic Integrated CircuitsQuantum OptoelectronicsQuantum Well DevicesQuantum WellsElectro-absorption ModulatorsElectroabsorption ModulationElectroabsorption ModulatorsInsertion LossQuantum Well HeterostructuresQuantum Well StructuresSemiconductor Optical ModulatorsSpacer Technology
We report the demonstration of a high-contrast (> 100:1), low-voltage multiple quantum well reflection modulator. The performance is achieved by using resonantly-enhanced electroabsorption in GaAs quantum wells embedded in the spacer region of an asymmetric Fabry-Pérot cavity, which is at the same time a pin diode. Optimum contrast is observed at ≃860nm with only 9 V bias and ≈3.5dB insertion loss.