Photoluminescence of GaAs single quantum wells confined by short-period all-binary GaAs/AlAs superlattices

Abstract

GaAs single quantum well heterostructures (SQWH’s) composed of all-binary AlAs/GaAs heterostructures by using AlAs/GaAs short-period superlattices (SPS) instead of the ternary alloy as cladding layers were grown by molecular beam epitaxy at low substrate temperature. Detailed photoluminescence measurements at 2 K reveal that these SPS confined SQWH’s exhibit superior luminescence properties. They are therefore very attractive for application in new optoelectronic devices. The SPS configuration has a strong effect on the energy of the confined particle transition because of the fully interacting quantum well system.