Extraction and modeling methods for FET devices

Rüdiger Follmann, J. Borkes, P. Waldow, I. Wolff

IEEE Microwave Magazine · 2000 · 11 citations · 4 references

Concepts

Abstract

The proposed method is based on spline functions, takes into account thermal and noise effects, allows a scaling of different FET device geometries, and is available in commercial CAD software like Agilents Series IV or ADS.

References

4