Oriented Growth of Semiconductors. IV. Vacuum Deposition of Epitaxial Indium Antimonide

Abstract

Using flash vaporization, indium antimonide has been grown epitaxially on indium antimonide substrates. The perfection of the epitaxial layers depends critically upon the method used for preparation of the substrate surface. Best results were obtained after the substrates had been ion-bombarded and annealed. Layers grown under optimum conditions yield x-ray rocking curves similar to those from good bulk crystals. p-n junctions made within these layers have characteristics similar to those reported for high-quality diodes made with bulk indium antimonide.