Nonhysteretic behavior inside the hysteresis loop of VO2 and its possible application in infrared imaging

Abstract

In the resistive phase transition in VO2, temperature excursions taken from points on the major hysteresis loop produce minor loops. For sufficiently small excursions these minor loops degenerate into single-valued, nonhysteretic branches (NHBs) linear in log(ρ) versus T and having essentially the same or even higher temperature coefficient of resistance (TCR) as the semiconducting phase at room temperature. We explain this behavior based on the microscopic picture of percolating phases. Similar short NHBs are found in otherwise hysteretic optical reflectivity. We discuss the opportunities NHBs present for infrared imaging technology based on resistive microbolometers. It is possible to choose a NHB with 102–103 times smaller resistivity than in a pure semiconducting phase, thus providing a microbolometer operating without hysteresis, with low tunable resistivity, and high TCR. Unique features of the proposed method and projected figures of merit are discussed in the context of uncooled focal plane array IR visualization technology.