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Effects of H2O Pretreatment on the Capacitance–Voltage Characteristics of Atomic-Layer-Deposited Al2O3 on Ga-Face GaN Metal–Oxide–Semiconductor Capacitors

Materials ScienceWide-bandgap SemiconductorElectrical EngineeringCapacitance–voltage CharacteristicsEngineeringApplied PhysicsAluminum Gallium NitrideGan Power DeviceGallium OxideAtomic-layer-deposited Al2o3H2o Pretreatment