Publication | Closed Access
Conductive-bridge memory (CBRAM) with excellent high-temperature retention
73
Citations
15
References
2013
Year
Unknown Venue
Conductive-bridge MemoryNon-volatile MemoryElectrical EngineeringElectronic DevicesExcellent RetentionEngineeringPhysicsElectronic MemoryEmerging Memory TechnologyApplied PhysicsQuantum MaterialsHigh-temperature Data RetentionMemory DeviceMemory DevicesResistive Random-access MemoryMicroelectronicsMemory ReliabilityCbram Cells
High-temperature data retention is a critical hurdle for the commercialization of emerging nonvolatile memories. For Conductive-Bridge RAM (CBRAM) [1], we discuss high-temperature retention in terms of the physics of quantum point contacts, and we report on a family of CBRAM cells that achieve excellent retention at temperatures exceeding 200°C.
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