Japanese Journal of Applied Physics · 1993 · 10 citations · 7 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsQuantum TunnelingSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsBarriersChemical Beam EpitaxyConduction BandCurrent-voltage RelationsDiode Current-voltage CharacteristicsPotential - Current CharacteristicsTunneling CurrentTunneling Diodes
A multi-quantum barrier (MQB) using the GaInAsP/InP system has been demonstrated for the first time. n-i-n tunneling diodes consisting of MQB and bulk barriers were grown by chemical beam epitaxy (CBE). From the measurement of 77 K current-voltage characteristics, the effective potential barrier height of 1.3 times the classical conduction band offset was obtained in the MQB structure.
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