Performance Improvement in RF LDMOS Transistors Using Wider Drain Contact

Abstract

In this letter, we proposed a new layout structure for RF laterally diffused metal-oxide-semiconductor (LDMOS) transistors. In a multifinger layout, the drain contact region was designed to be wider than the channel region. The wider drain increases the equivalent drift region width to reduce the drift resistance and suppress the quasi-saturation effect. We found that the wide-drain multifinger LDMOS devices have lower on-resistance, higher cutoff frequency, higher maximum oscillation frequency, and better power performances than the standard multifinger ones.