Initial stage of room temperature reaction at Ni/Si(111)–H interfaces

XPS study of the chemical structure of the nickel/silicon interface

P. J. Grunthaner, F. J. Grunthaner, J. W. Mayer · Journal of Vacuum Science and Technology · 1980 · 142 citations · Full text

Materials Science, Semiconductors, Interface Structure +14

Structure and Nucleation Mechanism of Nickel Silicide on Si(111) Derived from Surface Extended-X-Ray-Absorption Fine Structure

F. Comin, J. E. Rowe, P. H. Citrin · Physical Review Letters · 1983 · 120 citations

Engineering, Silicide Growth, Chemistry +20

Lattice-Location Experiment of the Ni-Si Interface by Thin-Crystal Channeling of Helium Ions

N.W. Cheung, J. W. Mayer · Physical Review Letters · 1981 · 93 citations

Engineering, Lattice-location Experiment, Vacuum Device +17

Bulk versus Surface Transport of Nickel and Cobalt on Silicon

M. Y. Lee, P. A. Bennett · Physical Review Letters · 1995 · 68 citations

Materials Science, Surface Characterization, Engineering +13

Interstitial precursor to silicide formation on Si(111)-(7×7)

P. A. Bennett, David G. Cahill, M. Copel · Physical Review Letters · 1994 · 67 citations

Materials Science, Room Temperature, Engineering +12