Effect of NO annealing conditions on electrical characteristics of n-type 4H-SiC MOS capacitors

The potential of diamond and SiC electronic devices for microwave and millimeter-wave power applications

R.J. Trew, J.B. Yan, P. Möck · Proceedings of the IEEE · 1991 · 360 citations

Engineering, Materials Engineering, Materials Science +17

Interfacial characteristics of N2O and NO nitrided SiO2 grown on SiC by rapid thermal processing

Huifeng Li, Sima Dimitrijev, H.B. Harrison et al. · Applied Physics Letters · 1997 · 321 citations

Engineering, Materials Engineering, Materials Science +17

Silicon oxycarbide formation on SiC surfaces and at the SiC/SiO2 interface

C. Önneby, C. G. Pantano · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1997 · 286 citations

Natural Sciences, Materials Engineering, Materials Science +17

Advances in SiC MOS Technology

James A. Cooper · physica status solidi (a) · 1997 · 279 citations

Engineering, Electrical Engineering, Materials Science +17

ARXPS studies of SiO₂-SiC interfaces and oxidation of 6H SiC single crystal Si-(001) and C-(00<ovl>1</ovl>) surfaces

B. Hornetz, H-J. Michel, J. Halbritter · Journal of materials research/Pratt's guide to venture capital sources · 1994 · 276 citations

Natural Sciences, Materials Engineering, Materials Science +14