Concepedia

Singlemode output power enhancement of InGaAsVCSELs by reduced spatial hole burning via surfaceetching

H.J. Unold, M. Golling, F. Mederer, Rainer Michalzik, D. Supper, K.J. Ebeling

Electronics Letters · 2001 · 15 citations · 1 references

DOI

Concepts

Abstract

Completely singlemode MBE-grown selectively oxidised InGaAs-VCSELs with aperture diameters of up to 14 µm have been fabricated using a self-aligned shallow surface etch. By choosing the growth position accordingly, a continuous variation of the aperture diameter across the wafer is achieved to optimise the surface etch to aperture diameter ratio. A record singlemode output power of 5.7 mW (30 dB SMSR) is obtained for a 5.8 µm-aperture diameter, 2.8 µm etch spot diameter device.

References

1

Increased-area oxidised single-fundamental modeVCSEL with self-aligned shallow etched surface relief

H.J. Unold, M. Grabherr, Franz Eberhard et al. · Electronics Letters · 1999 · 39 citations

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