GaAs(001) Epitaxial Layer on SOS Using a Specifically Designed MOCVD System

Abstract

GaAs (001) single-domain and high-quality layers are obtained on slightly misoriented Si (001)-on-sapphire (01̄12) substrates by using a new MOCVD system specifically designed for GaAs-on-Si growth. The X-ray FWHM of 10 µm-thick GaAs is reduced from 140 arcsec to 65 arcsec by thermal cycle annealing. A crack-free 15 µm-thick GaAs layer with a dislocation density of 3×10 6 cm -2 is obtained by combining the thermal cycle annealing and the strained-layer superlattices.