Japanese Journal of Applied Physics · 1999 · 26 citations · 11 references
Natural SciencesMaterials EngineeringMaterials ScienceInorganic ChemistryMaterials ChemistrySurface ScienceChemical Vapor DepositionInorganic SynthesisChemical Vapor Deposition MaterialsChemical Vapor Deposition PrecursorsMetal-organic Chemical Vapor DepositionMetalorganic Chemical Vapor DepositionPrecursor ChemistryTemperature-dependent Resistivity
A potentially manufacturable liquid source metalorganic chemical vapor deposition process was successfully applied to deposit Iridium films on a variety of substrates. The depositions of Ir were carried out in the temperature range of 300–450°C from tetrahydrofuran (THF) solution of CH 3 CpIrCOD (Cp=cyclopentadienyl, COD=cyclooctadiene) in a low-pressure, hot-wall reactor. Oxygen assisted pyrolysis of the precursor at 350°C resulted in a remarkably high Ir growth rate of 70 nm/min on IrO x /Si substrate. Additionally, Ir on Si exhibited a room-temperature resistivity of 10.2 µΩ cm. The as-deposited polycrystalline Ir films were highly reflecting, dense, and fine grained.
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