Initial oxidation of H-terminated Si(111) surfaces studied by HREELS

Ideal hydrogen termination of the Si (111) surface

G. S. Higashi, Yves J. Chabal, Gary W. Trucks et al. · Applied Physics Letters · 1990 · 1.4K citations

Natural Sciences, Chemistry, Materials Science +17

The formation of hydrogen passivated silicon single-crystal surfaces using ultraviolet cleaning and HF etching

Takayuki Takahagi, Ichiro Nagai, A. Ishitani et al. · Journal of Applied Physics · 1988 · 495 citations

Engineering, Materials Engineering, Materials Science +17

Dissociative chemisorption of H2O on Si(100) and Si(111) - a vibrational study

H. Ibach, H. Wagner, D. Bruchmann · Solid State Communications · 1982 · 269 citations

Natural Sciences, Chemistry, Materials Science +14

On the formation of semiconductor interfaces

F. Flóres, C. Tejedor · Journal of Physics C Solid State Physics · 1987 · 186 citations

Engineering, Materials Engineering, Materials Science +14

Reactions of atomic hydrogen with the Si(111) (7×7) surface by high resolution electron energy loss spectroscopy

Hisayoshi Kobayashi, K. Edamoto, M. Onchi et al. · The Journal of Chemical Physics · 1983 · 158 citations

Natural Sciences, Materials Science, Physics +17