Japanese Journal of Applied Physics · 1981 · 73 citations · 2 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCarrier TransportDopingField-effect TransistorsNanoelectronicsSemiconductor HeterostructuresSemiconductor PhysicsChannel Doping EffectsEnhancement-mode TransistorsHeterojunction DevicesHeterostructure Field-effect TransistorsHeterostructure TransistorsHigh-electron-mobility TransistorsMolecular Beam Epitaxy
Enhancement-mode high electron mobility transistors (E-HEMTs) with selectively doped GaAs/n-Al x Ga 1- x As heterojunction structures grown by molecular beam epitaxy are described. E-HEMTs with 2- µm long gates have exhibited the square-law drain characteristic. The device has a g m of 409 mSmm -1 of gate width at 77 K and 193 mSmm -1 at 300 K. This value of g m at 77 K is the highest in all field effect devices reported thus far.
2
The prospects for ultrahigh-speed VLSI GaAs digital logic
R.C. Eden, B.M. Welch, R. Zucca et al. · IEEE Transactions on Electron Devices · 1979 · 52 citations
Engineering, Computer Engineering, Electrical Engineering +17