Vacuum-ultraviolet light emission from xenon directly excited by ballistic output electrons of nanocrystalline silicon planar cathode

Abstract

The effect of electron incidence into xenon gas molecules has been investigated by using a nanocrystalline silicon (nc-Si) planar ballistic emitter. Vacuum-ultraviolet light emission is observed without discharging when the nc-Si device is driven in xenon gas. The emission spectrum of xenon at 10kPa shows peaks at 152 and 172nm which originate from Xe2* radiation. These results strongly suggest that energetic electrons directly excite xenon molecules followed by radiative relaxations. The observed effect is potentially applicable to mercury-free, efficient, and stable flat panel light sources.