Electrical instability and filamentation in ggMOS protection structures

Electron and hole ionization rates in epitaxial silicon at high electric fields

W.N. Grant · Solid-State Electronics · 1973 · 427 citations

Engineering, Materials Science, Physics +13

Avalanche injection and second breakdown in transistors

P.L. Hower, V.G.K. Reddi · IEEE Transactions on Electron Devices · 1970 · 233 citations

Engineering, Electrical Engineering, Physics +14

A numerical model of avalanche breakdown in MOSFET's

T. Toyabe, Ken Yamaguchi, S. Asai et al. · IEEE Transactions on Electron Devices · 1978 · 155 citations

Engineering, Electrical Engineering, Circuit Theory +16

Negative differential conductivity and isothermal drain breakdown of the GaAs MESFET

Y.B. Martynov, V.F. Sinkevitch, A. S. Tager · IEEE Transactions on Electron Devices · 1996 · 39 citations

Engineering, Electrical Engineering, Microelectronics +16

Current instability and burnout of HEMT structures

V.F. Sinkevitch · Solid-State Electronics · 1996 · 17 citations

Engineering, Electrical Engineering, Electronic Materials +8