Method of preparing Si and Ge specimens for examination by transmission electron microscopy

Abstract

A jet chemical polishing method suitable for preparing Si and Ge specimens for examination by transmission electron microscopy is described. For Si a HNO3/HF solution is used, while for Ge either a HNO3/HF or a NaClO solution is used. The method is simple and rapid. Electron micrographs illustrating the method are given.