Conduction-type control of fullerene films from n- to p-type by molybdenum oxide doping

Abstract

Conduction-type control of fullerene (C60) films from n- to p-type by doping with molybdenum oxide (MoO3) was demonstrated. The energetic value of the Fermi level, 4.60 eV, for nondoped C60 films measured by the Kelvin vibrating capacitor method was positively shifted to 5.88 eV, and approached the valence band by the coevaporated doping of MoO3 at a concentration of 3300 ppm. The existence of upward band bending of the Schottky junction formed at the interface between a metal and a p-type C60 film formed by MoO3 doping was confirmed based on its photovoltaic properties.