Low and anisotropic barrier energy for adatom migration on a GaAs (110) surface studied by first-principles calculations

Abstract

We determined potential-energy surfaces for Ga and As adatoms on a GaAs (110) surface by first-principles calculations in order to understand the epitaxial growth mechanism. We found small migration barrier energies for Ga and As, which explain the long atom-migration length suggested by experiments. We also found that Ga migration is one dimensional and As migration is two dimensional, and that, for both Ga and As adatoms, the sites near As of the topmost layer are stable while those near Ga are unstable.