Applied Physics Letters · 1990 · 374 citations · 5 references
EngineeringMaterials SciencePhysicsElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDopingSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesTwo-dimensional SemiconductorsMolecular Beam EpitaxyTwo-dimensional Electron GasesTwo-dimensional Electron SystemsTwo-dimensional Semiconductor Interfaces
We have succeeded in fabricating a two-dimensional electron gas (2DEG) on the cleaved (110) edge of a GaAs wafer by molecular beam epitaxy (MBE). A (100) wafer previously prepared by MBE growth is reinstalled in the MBE chamber so that an in situ cleave exposes a fresh (110) GaAs edge for further MBE overgrowth. A sequence of Si-doped AlGaAs layers completes the modulation-doped structure at the cleaved edge. Mobilities as high as 6.1×105 cm2/V s are measured in the 2DEG at the cleaved interface.
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Electron mobilities exceeding 107 cm2/V s in modulation-doped GaAs
L. N. Pfeiffer, K. W. West, H. L. Störmer et al. · Applied Physics Letters · 1989 · 415 citations