Physical Review Letters · 1997 · 182 citations · 28 references
Natural SciencesMaterials ScienceSemiconductor MaterialsSurface ChemistrySurface ScienceDiffusion In SolidsSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesSurface DiffusionSurface PhysicsAdatom DiffusionAnisotropic Surface DiffusionAnisotropyDiffusion AnisotropyDiffusion BarriersSurface Diffusion BarriersSurface Diffusion KineticsSurface Diffusion Mechanisms
Employing first principles total energy calculations we have studied the behavior of Ga and Al adatoms on the GaAs(001)- $\ensuremath{\beta}2$ surface. Beside the adsorption site we identify two diffusion channels that are characterized by different adatom-surface dimer interaction. Both affect the adatom migration: in one channel the adatom jumps across the surface dimers and leaves the dimer bonds intact; in the other one the dimer bonds are broken. The two channels are taken into account to derive effective adatom diffusion barriers. We find a strong diffusion anisotropy for both Al and Ga adatoms and, in agreement with experiments, higher diffusion barriers for Al than for Ga.
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Pseudopotentials that work: From H to Pu
Giovanni B. Bachelet, D. R. Hamann, M. Schlüter · Physical review. B, Condensed matter · 1982 · 3.4K citations
Natural Sciences, Chemistry, Physics +17