Publication | Open Access
Novel Diffusion Mechanism on the GaAs(001) Surface: The Role of Adatom-Dimer Interaction
181
Citations
28
References
1997
Year
Materials ScienceAluminium NitrideWide-bandgap SemiconductorEngineeringPhysicsSurface ScienceApplied PhysicsCondensed Matter PhysicsQuantum MaterialsGallium OxideSemiconductor MaterialStrong Diffusion AnisotropyAdsorption SiteNovel Diffusion MechanismAdatom-dimer InteractionCompound SemiconductorAdatom MigrationCategoryiii-v Semiconductor
Employing first principles total energy calculations we have studied the behavior of Ga and Al adatoms on the GaAs(001)- $\ensuremath{\beta}2$ surface. Beside the adsorption site we identify two diffusion channels that are characterized by different adatom-surface dimer interaction. Both affect the adatom migration: in one channel the adatom jumps across the surface dimers and leaves the dimer bonds intact; in the other one the dimer bonds are broken. The two channels are taken into account to derive effective adatom diffusion barriers. We find a strong diffusion anisotropy for both Al and Ga adatoms and, in agreement with experiments, higher diffusion barriers for Al than for Ga.
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