Proceedings of the IEEE · 1972 · 13 citations · 2 references
Electrical EngineeringEngineeringRf SemiconductorHigh-frequency DeviceNanoelectronicsElectronic EngineeringApplied PhysicsReflex KlystronsHigh-efficiency OperationX BandMicroelectronicsMicrowave EngineeringOptoelectronicsTransferred Electron OscillatorsSemiconductor DeviceElectronic Circuit
CW GaAs Schottky-barrier IMPATT oscillators have been fabricated using nichrome as the barrier metal. Several of the oscillators exhibited CW efficiencies ranging from 15 percent to 17.5 percent in C and X band. The best result was 19-percent efficiency in X band from an oscillator which produced 700 mW of output power. Noise performance which is comparable to those of transferred electron oscillators and reflex klystrons has also been observed.
2
Fabrication and noise performance of high-power GaAs IMPATTS
J.C. Irvin, D. J. Coleman, W. Johnson et al. · Proceedings of the IEEE · 1971 · 32 citations
Semiconductors, Semiconductor Technology, Electrical Engineering +14