IEEE Transactions on Microwave Theory and Techniques · 1995 · 30 citations · 6 references
Electrical EngineeringEngineeringGaas-algaas MaterialsRadio FrequencyHigh-frequency DeviceRf SemiconductorElectronic EngineeringApplied PhysicsFrequency QuintuplersIngaas-inalas Single-barrier VaractorComputational ElectromagneticsInstrumentationMicroelectronicsMicrowave EngineeringOptoelectronicsElectromagnetic Compatibility
InGaAs-InAlAs single-barrier varactor (SBV) diodes are tested as frequency quintuplers. The diodes were tested in a crossed-waveguide structure and provided output frequencies between 148 and 187 GHz. The highest observed flange-to-flange efficiency was 0.78% at an output frequency of 172 GHz. This is nearly four times greater than the best quintupler efficiency obtained for previous SBV varactors made from the GaAs-AlGaAs materials system.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
6