IEEE MTT-S International Microwave Symposium digest · 2007 · 17 citations · 0 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesCurrent-voltage CharacteristicsDevice CharacterizationDevice ModelingDevice SimulationIntegrated Circuit DevicesSemiconductor PhysicsCompact Device ModelingCompact ModelingCurrent ContinuityField-effect Transistor SimulationGallium Nitride (Gan) MaterialsMosfet ModelingPhysics-based Device ModelingPhysics-based Simulation
A physics-based analytic model with no fitting parameters is introduced for the AlGaN/GaN HFET. For unsaturated operation, non-linear analytic models for the I-V characteristics in the two access regions and beneath the gate are developed. The resulting equations are linked together by voltage and current continuity at the boundaries. Good agreement between the model and corresponding simulations with ATLAS, a commercial simulator, is demonstrated. In addition, the proposed model is shown to compare favorably with popular curve-fitting models of HFET operation.