IEEE Journal of Solid-State Circuits · 1983 · 57 citations · 3 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSensorsCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyField-effect TransistorsMagnetic FieldsMagnetic SensorsMetal-oxide-semiconductor Field-effect TransistorsCmos Analog Circuit DesignCmos Analog Integrated CircuitsCmos Differential AmplifiersDifferential Amplifier StagesIntegrated Magnetic SensorsIntegrated Sensor DesignMagnetic Field SensorsPolysilicon
The authors present a novel, fully integrated magnetic field sensor made in the standard, polysilicon-gate CMOS technology. The circuit shows a sensitivity of 1.2 V/T with 10 V supply voltage and 100 /spl mu/A current consumption. The circuit consists of a pair of split-drain MOS transistors in a CMOS-differential amplifier-like configuration.
3