GaAs/AlGaAs distributed feedback-transverse junction stripe laser using a hybrid liquid phase epitaxy/metal-organic chemical vapor deposition growth technique

Abstract

Room-temperature operation was obtained in a new transverse junction stripe laser with distributed feedback. The wafers were grown by a liquid phase epitaxy/metal-organic chemical vapor deposition (LPE/MO-CVD) hybrid technique. These lasers operated stably in a single longitudinal mode at room temperature under pulsed operation. The temperature dependence of lasing wavelength was dλ/dT = 0.63 Å/°C.