The growth kinetics of silicon nitride deposited from the SiH4–N2 reactant mixture in a remote plasma - Concepedia

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The growth kinetics of silicon nitride deposited from the SiH4–N2 reactant mixture in a remote plasma

12

Citations

14

References

2004

Year

W. M. M. Kessels, F.J.H. van Assche, P.J. van den Oever, M. C. M. van de Sanden

Journal of Non-Crystalline Solids

Remote PlasmaEngineeringPlasma ProcessingSurface ScienceApplied PhysicsChemistryChemical Vapor DepositionGrowth KineticsChemical KineticsSih4–n2 Reactant Mixture

References

	Year	Citations

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