Fabrication of large area subwavelength antireflection structures on Si using trilayer resist nanoimprint lithography and liftoff

Abstract

In this article we report on the fabrication of subwavelength antireflection structures on silicon substrates using a trilayer resist nanoimprint lithography and liftoff process. We have fabricated cone-shaped nanoscale silicon pillars with a continuous effective index gradient, which greatly enhances its antireflective performances. Our measurements show that the two-dimensional subwavelength structure effectively suppresses surface reflection over a wide spectral bandwidth and a large field of view. A reflectivity of 0.3% was measured at 632.8 nm wavelength, which is less than 1% of the flat silicon surface reflectivity.