Ion implantation doping for AlGaN/GaN HEMTs

Abstract

Abstract Selective doping using ion implantation has been developed for the source/drain contacts of AlGaN/GaN high electron mobility transistors (HEMTs). As the annealing temperature of the electrical activation increased, the gate leakage current increased, although the specific contact resistance decreased. The characteristics of ion implanted HEMTs were improved using the optimized annealing temperature of 1150 °C. A saturation drain current of 0.68 A/mm and a maximum transconductance of 0.17 S/mm were obtained without degrading the off‐state breakdown voltage. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)