Variation of Hall Mobility of Carriers in Nondegenerate Semiconductors with Electric Field

Abstract

The study of Hall effect along with conductivity at high electric fields will shed more light on the behavior of carriers at such fields. This can be done by little modification of existing apparatus.In this paper the authors have obtained an expression for Hall mobility applicable in a large range of fields and non-Maxwellian distribution of velocities of carriers. This expression, together with the velocity distribution of carriers in the presence of the field, obtained by Yamashita and Watanabe, has been used for the theoretical investigation of the variation of Hall mobility with electric field.