Applied Physics Letters · 1997 · 18 citations · 4 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsAmorphous SemiconductorsCarrier TransportCurrent-voltage CharacteristicsDevice ModelingElectronic Transport ModelingSemiconductor PhysicsAmorphous SiliconBiasesDiode Current-voltage CharacteristicsDynamic Transient BehaviorHydrogenated Amorphous SiliconReverse Bias CharacteristicsSchottky Barrier DiodesSchottky Barriers
The application of hydrogenated amorphous silicon Schottky diodes to large-area imaging requires knowledge of the variation in reverse-bias current over long timescales. When the diode is subject to electrical stress, a power-law dependence of reverse current with time is observed. This is followed by a stretched-exponential behavior during the subsequent zero-bias recovery period. Both of these results are attributed to dispersive electron transport in the Schottky diode.
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