Applied Physics Letters · 1978 · 119 citations · 5 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor MaterialsOxidation ReactionsSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor SurfacesSurface OxidationThin Film OxidationOxidationOxidation MechanismsSemiconductor OxidationSilicon DioxideSilicon OxidationSteam OxidationSurface Oxidation MechanismsThin Film Oxidation Kinetics
The utilization of WSi2 thin films as gate electrodes in field-effect transistors depends on the ability of this material to form a continuous electrically insulating SiO2 overlayer. In the steam oxidation of WSi2 films deposited on polysilicon, SiO2 forms on the surface by means of the rapid diffusion of Si through the WSi2 which appears in this case to be quite inert. During the initial stages of the steam oxidation of WSi2 films deposited on SiO2, removal of Si from the silicide (to form SiO2) apparently leads to the formation of free W, rather than the anticipated tungsten-rich W3Si3.
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<i>Standard X-Ray Diffraction Powder Patterns</i>
Howard E Swanson, Eleanor Tatge, Ruth K. Fuyat · Physics Today · 1954 · 654 citations