Roles of interface and oxide trap density in the kinked current behavior of Al/SiO2/Si(p) structures with ultra-thin oxides

MOS (Metal Oxide Semiconductor) Physics and Technology

K.J.S. Cave · IEE Proceedings I Solid State and Electron Devices · 1983 · 1.7K citations

Engineering, Chemical Engineering, Nuclear Engineering +12

Description of the SiO2Si interface properties by means of very low frequency MOS capacitance measurements

R. Castagné, A. Vapaille · Surface Science · 1971 · 526 citations

Engineering, Materials Engineering, Materials Science +14

MOS capacitance measurements for high-leakage thin dielectrics

Kevin Yang, Chenming Hu · IEEE Transactions on Electron Devices · 1999 · 491 citations

Engineering, Electrical Engineering, Materials Science +17

Current Transport and Maximum Dielectric Strength of Silicon Nitride Films

Simon M. Sze · Journal of Applied Physics · 1967 · 476 citations

Engineering, Materials Engineering, Materials Science +17

Modeling and simulation of tunneling through ultra-thin gate dielectrics

Andreas Schenk, Gernot Heiser · Journal of Applied Physics · 1997 · 235 citations · Full text

Engineering, Electrical Engineering, Microelectronics +16