Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties · 1984 · 63 citations · 6 references
EngineeringMaterials EngineeringMaterials ScienceCondensed Matter PhysicsMaterials PhysicsSemiconductor MaterialsCarrier TransportDiffusion In SolidsDopingSemiconductor DefectsSemiconductor PhysicsSilicon MaterialsBulk DiffusionConcentration ProfilesDiffusion CoefficientsDiffusion MechanismsDopant DiffusionImpurity DiffusionInterstitial DiffusionSecondary Ion Mass Spectrometry
Abstract The diffusion of germanium as a lattice impurity in silicon has been studied for 38 specimens, annealed at temperatures between 1149 and 1661 K. A total of 89 concentration profiles were evaluated by means of secondary-ion mass spectrometry. The diffusion coefficients were found to range between 2·0×l0−19 and 7·7 × 10−12 cm2s−1. The Arrhenius parameters are Do = 1·03 × 105cm2 s−1 and Q = 514·5kJmol−1. The results contradict the view suggested by Seeger and Chik (1968), that a transition takes place from an interstitial mechanism at high temperatures to a vacancy mechanism at low temperatures.
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Self‐ and impurity diffusion in Ge and Si
D. Shaw · physica status solidi (b) · 1975 · 114 citations
The Diffusion Coefficient of Germanium in Silicon
M. Ogino, Yasuhisa Oana, M. Watanabe · physica status solidi (a) · 1982 · 83 citations
Self-diffusion in intrinsic silicon
Ludomir Kalinowski, Remy Seguin · Applied Physics Letters · 1979 · 81 citations
The diffusion of germanium in silicon
G.L. McVay, A. R. DuCharme · Journal of Applied Physics · 1973 · 68 citations