Publication | Closed Access
Dominant rate process of silicon surface etching by hydrogen chloride gas
34
Citations
23
References
2005
Year
Materials EngineeringChemical EngineeringEngineeringMicrofabricationHydrogen Chloride GasSurface ScienceApplied PhysicsSilicon SurfaceSemiconductor Device FabricationDominant Rate ProcessSilicon On InsulatorMicroelectronicsPlasma EtchingSurface ProcessingPlasma Processing
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