GaN metal-oxide-semiconductor diodes with molecular beam epitaxy-Al2O3 as a template followed by atomic layer deposition growth - Concepedia

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GaN metal-oxide-semiconductor diodes with molecular beam epitaxy-Al2O3 as a template followed by atomic layer deposition growth

19

Citations

17

References

2008

Year

Yang-Hua Chang, H. C. Chiu, Wen-Hsin Chang, J. Kwo, Chieh‐Chih Tsai, J. M. Hong, M. Hong

Journal of Crystal Growth

Materials ScienceEngineeringMolecular Beam Epitaxy-al2o3Applied PhysicsAluminum Gallium NitrideGan Power DeviceGallium OxideMolecular Beam EpitaxyCategoryiii-v SemiconductorGan Metal-oxide-semiconductor Diodes

References

	Year	Citations

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