Defect-free nucleation of silicon on {111} silicon surfaces

A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniques

G. R. Booker, B.A. Joyce · Philosophical magazine · 1966 · 87 citations

Materials Science, Twin Orientation, Epitaxial Growth +14

Silicon epitaxial growth

Jun‐ichi Nishizawa, Takeshi Terasaki, M. Shimbo · Journal of Crystal Growth · 1972 · 49 citations

Physics, Applied Physics, Silicon Epitaxial Growth +3

Layer growth in silicon epitaxy

Jun‐ichi Nishizawa, Takeshi Terasaki, M. Shimbo · Journal of Crystal Growth · 1972 · 35 citations

Physics, Applied Physics, Layer Growth +3

Observation of Nucleus Centers on Solution-Grown Germanium Epitaxial Layers

K. Kijima, Nobuo Miyamoto, Jun‐ichi Nishizawa · Journal of Applied Physics · 1971 · 16 citations

J. Appl, Engineering, Nuclear Physics +21

Surface Orientation Effect of the Shadow of the Stacking Fault

Hideo Sunami, Takeshi Terasaki, Nobuo Miyamoto et al. · Journal of Applied Physics · 1969 · 14 citations

J. Appl, Engineering, Surface Orientation Effect +16