10 Gbit/s long wavelength <i>pin</i> -HEMT photoreceivergrown on GaAs

Abstract

The first long wavelength pin-HEMT photoreceiver grown on GaAs has been manufactured using a 0.3 µm gate length AlGaAs/GaAs HEMT process. At a wavelength of 1.55 µm the monolithically integrated InGaAs pin photodiode has a responsivity of 0.40 A/W, and the photoreceiver has a –3 dB bandwidth of 6.9 GHz. Clear and open eye diagrams for a 10 Gbit/s 1.55 µm optical data stream have been demonstrated.