Publication | Closed Access
Influence of growth parameters on crack density in thick epitaxially lateral overgrown GaN layers by hydride vapor phase epitaxy
10
Citations
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References
2001
Year
Materials EngineeringMaterials ScienceWide-bandgap SemiconductorEngineeringCrack DensityApplied PhysicsGan Power DeviceEpitaxial GrowthGan LayersGrowth Parameters
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