Physical Review Letters · 1991 · 367 citations · 26 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsMaterials ChemistrySemiconductor MaterialsAb Initio MethodsCrystal ChemistryCrystallographyDopingIon ImplantationAb Initio CalculationsDiamond Nitrogen-vacancy CentersDiamond SemiconductorsDistortionsDopant ImplantationDoping StrategiesInterstitial DopingIon Implantation Effects
Potential n-type dopants in diamond are investigated via ab initio methods. The well-known distortions around the deep donor N are found to arise from the interaction of the N lone pair with a C dangling bond. P, Li, and Na are all shallow dopants, but their solubilities are muh too low for doping via in-diffusion. Li is a relatively fast diffuser, Na is stable up to moderate temperatures, while P should remain immobile even at high temperatures. Na, being an interstitial dopant, is particularly suitable for ion implantation, since there is no need to displace host atoms.
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Norm-Conserving Pseudopotentials
D. R. Hamann, M. Schlüter, Chun-Yueh Chiang · Physical Review Letters · 1979 · 4.4K citations
Natural Sciences, Chemistry, Physics +13
Pseudopotentials that work: From H to Pu
Giovanni B. Bachelet, D. R. Hamann, M. Schlüter · Physical review. B, Condensed matter · 1982 · 3.4K citations
Natural Sciences, Chemistry, Physics +17
Electron-Spin Resonance of Nitrogen Donors in Diamond
William V. Smith, P. P. Sorokin, I. L. Gelles et al. · Physical Review · 1959 · 554 citations