Electronics Letters · 1987 · 13 citations · 5 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser DiodesOptical SourcesOptoelectronic DevicesQuantum ConfinementSemiconductor HeterostructuresSemiconductor LasersDouble Heterostructure DevicesDouble HeterostructuresMaximum OutputMaximum Power OutputPower Conversion EfficiencyPower OutputQuantum Well Laser DiodesSemiconductor Laser Diodes
Single-quantum-well, separate-confinement double-heterostructure laser diode arrays which exhibit a high power conversion efficiency of greater than 54% have been demonstrated. The high efficiency results from a low internal loss of 3cm1 and high internal conversion efficiency. The maximum output power for a 100μm emitting aperture is 2 W CW and is independent of the cavity length.
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Low-threshold GRIN-SCH GaAs/GaAlAs laser structure grown by OM VPE
S. D. Hersee, M. Baldy, P. Assenat et al. · Electronics Letters · 1982 · 41 citations
One watt CW visible single-quantum-well lasers
C. Lindström, R. D. Burnham, D. R. Scifres et al. · Electronics Letters · 1983 · 23 citations