A direct determination of the lifetime distribution of the 1.4 eV luminescence of a-Si:H

Abstract

The authors have measured the distribution of lifetimes in the high-energy emission band of a-Si:H by studying its frequency response to modulated excitation. Their results show that conventional methods of TRS must be applied with care to this emission band, because of its very wide range of lifetimes. They find that the distribution is dependent on excitation power density to the lowest powers measurable; this demonstrates that the recombination is not geminate but occurs between distant pairs.