Applied Physics Letters · 1983 · 81 citations · 5 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDefects In Electronic MaterialsDopingImplant MaterialsIon ImplantationSemiconductor DefectsSemiconductor Device MaterialsAnnealing EffectsDevice FabricationDisplacementDopant ActivationExtended DefectsRapid Thermal AnnealingThermal AnnealingThermal Annealing Effects
Annealing of ion implantation damage and concomitant electrical activation of dopants, depth profiles, and lattice location of dopants have been studied in arsenic and boron-implanted specimens after rapid thermal annealing. A ‘‘complete’’ annealing of displacement damage with full electrical activation of dopants and profile broadening less than 100 Å can be attained for shallow implants whereas some extended defects are retained for deep implants. Mechanisms of rapid thermal annealing and its implications in solid state device fabrication are discussed.
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