Applied Physics Letters · 2005 · 14 citations · 19 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCarbon NanotubesCurrent-voltage CharacteristicsField-effect TransistorsNanoelectronicsNanotubesTransistor BiasingCarbon Nanotube ElectronicsCarbon Nanotube Field-effect TransistorsCurrent GainDifferential GainElectrical Conductivity Of NanotubesGate-dependent Current-voltage BehaviorLow-temperature MaterialsTransistor Output Characteristics
We present three-terminal transistor-like operation of Y-junction carbon nanotubes with three independent contacts. Using one of the terminals as a controlling gate, differential current gain of up to 300 is observed at low temperature (4.2K) in the biasing region where the gate current is small. We present evidence that the observed transistor characteristics can be ascribed to a new amplification mechanism: gated hopping via conducting grains.
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