Applied Physics Letters · 2014 · 13 citations · 15 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsNanotechnologySemiconductor DevicesElectron MicroscopyNanomaterial CharacterizationNanomechanicsStrain AnalysisStrain MeasurementTransmission Electron MicroscopyDark-field ImagingHigh-resolution Strain MeasurementHigh-resolution Transmission Electron MicroscopyMicroscale Strain MeasurementScanning Transmission Electron MicroscopyStrain Field MeasurementTransmission Electron Microscopy Of InterfacesTransmission Electron Microscopy Strain Mapping
We report the use of scanning moiré fringe (SMF) imaging through high-angle annular dark-field scanning transmission electron microscopy (STEM) to measure the strain field around a CoSi2 contact embedded in the source and drain (S/D) region of a transistor. The atomic arrangement of the CoSi2/Si (111) interface was determined from the high-resolution (HR)-STEM images, and the strain field formed around the S/D region was revealed by nanometer-scale SMFs appearing in the STEM image. In addition, we showed that the strain field in the S/D region measured by SMF imaging agreed with results obtained via peak-pairs analysis of HR-STEM images.
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